how to make a 12v hunting lamp circuit, mosfet, irfz 44n
In this video, I'll show you How to make 12v chaser lamps circuit, irfz44n mosfet
The IRFZ44N is a voltage-controlled variable N-channel Power MOSFET available in the TO-220 package in enhancement mode. It is used to produce very low-resistance silicon regions with advanced processing techniques and high switching speed in robust device design. These power MOSFETs are highly efficient and reliable for various applications of switching, LED driver, and general and DC motor driver circuits.
Features and Technical Specifications:
The following are the features and technical specifications of IRFZ44N MOSFET.
It is a small signal N-channel Power MOSFET with a high drain current and fast switching speed available in the To-220 package.
The maximum drain current (continuous) Id is 49mAmps.
The peak pulse drain current is 160 Amps.
The gate threshold voltage (VGS) (minimum) is 2V.
The gate threshold voltage (maximum) is ±20V.
Drain-to-Source voltage (VDS) is 55V maximum.
The rise time is 60 nsec.
Fall time is 45 nsec.
Mostly interfaced with an Arduino because of the limited threshold current.
Power dissipation is 94 Watts (maximum).
The maximum storage and operating temperature range is -55°C to +175°C.
Drain-to-Source resistance is 17.5 mohms.
It has a fast switching capacity and advanced process technology.
Ultra-low ON resistance and dynamic rating.
The gate charge is low.
RoHS compliant and lead-free.
Pulse width is limited by maximum junction temperature.
how to make a 12v hunting lamp circuit, mosfet, irfz 44n
In this video, I'll show you How to make 12v chaser lamps circuit, irfz44n mosfet
The IRFZ44N is a voltage-controlled variable N-channel Power MOSFET available in the TO-220 package in enhancement mode. It is used to produce very low-resistance silicon regions with advanced processing techniques and high switching speed in robust device design. These power MOSFETs are highly efficient and reliable for various applications of switching, LED driver, and general and DC motor driver circuits.
Features and Technical Specifications:
The following are the features and technical specifications of IRFZ44N MOSFET.
It is a small signal N-channel Power MOSFET with a high drain current and fast switching speed available in the To-220 package.
The maximum drain current (continuous) Id is 49mAmps.
The peak pulse drain current is 160 Amps.
The gate threshold voltage (VGS) (minimum) is 2V.
The gate threshold voltage (maximum) is ±20V.
Drain-to-Source voltage (VDS) is 55V maximum.
The rise time is 60 nsec.
Fall time is 45 nsec.
Mostly interfaced with an Arduino because of the limited threshold current.
Power dissipation is 94 Watts (maximum).
The maximum storage and operating temperature range is -55°C to +175°C.
Drain-to-Source resistance is 17.5 mohms.
It has a fast switching capacity and advanced process technology.
Ultra-low ON resistance and dynamic rating.
The gate charge is low.
RoHS compliant and lead-free.
Pulse width is limited by maximum junction temperature.
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